PDN3916S mosfets equivalent, n-channel mosfets.
* 30V,5.1A , RDS(ON)=35mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
Applications
* MB / VGA / Vcore
* Load Sw.
SOT23S Pin Configuration
D
D
S G
G
S
BVDSS 30V
RDSON 35m
ID 5.1A
Features
* 30V,5.1A , RDS(ON)=35mΩ@VGS=1.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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