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PDN3916S - N-Channel MOSFETs

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 30V,5.1A , RDS(ON)=35mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number PDN3916S
Manufacturer Potens semiconductor
File Size 654.37 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDN3916S Datasheet

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Full PDF Text Transcription (Reference)

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30V N-Channel MOSFETs PDN3916S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23S Pin Configuration D D S G G S BVDSS 30V RDSON 35m ID 5.1A Features  30V,5.