PDN3916S
Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 30V,5.1A , RDS(ON)=35mΩ@VGS=10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
