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PDS3812 - Dual N-Channel MOSFETs (Potens semiconductor)
30V Dual N-Channel MOSFETs PDS3812 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technol.

PDS3805 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDS3805 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3807 - P-Channel MOSFETs (Potens semiconductor)
30V P-Channel MOSFETs PDS3807 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS3808 - N-Channel MOSFETs (Potens semiconductor)
30V N-Channel MOSFETs PDS3808 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. .

PDS38W - Switching Diode (Prisemi)
PDS32W THRW PDS320W Switching Diode Description Surface Mount Schottky Barrier Rectifier Rectifiers Reverse Voltage 20 to 200 V Forward Current 3.0 A.

PDS3100 - 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
Green PDS3100 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER PowerDI5 Features • Guard Ring Die Construction for Transient Protection • Low Power Loss,.

PDS3100Q - 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)
Product Summary Green PDS3100Q 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI®5 Features VR IF VF MAX (V) IR MAX (mA) (V) (A) @ +25°C @ +.

PDS310W - Switching Diode (Prisemi)
PDS32W THRW PDS320W Switching Diode Description Surface Mount Schottky Barrier Rectifier Rectifiers Reverse Voltage 20 to 200 V Forward Current 3.0 A.

PDS312W - Switching Diode (Prisemi)
PDS32W THRW PDS320W Switching Diode Description Surface Mount Schottky Barrier Rectifier Rectifiers Reverse Voltage 20 to 200 V Forward Current 3.0 A.

PDS315W - Switching Diode (Prisemi)
PDS32W THRW PDS320W Switching Diode Description Surface Mount Schottky Barrier Rectifier Rectifiers Reverse Voltage 20 to 200 V Forward Current 3.0 A.