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PJX20N60D Datasheet N-Channel MOSFETS

Manufacturer: Potens semiconductor

Datasheet Details

Part number PJX20N60D
Manufacturer Potens semiconductor
File Size 462.08 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJX20N60D Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply TO247 Pin Configuration D S D G G S BVDSS 600V RDSON 180m ID 20A

Overview

600V N-Channel MOSFETS PJX20N60D General.

Key Features

  • 20A,600V, RDS(ON) =180mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.