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Powersem GmbH

PSHM06 Datasheet Preview

PSHM06 Datasheet

CoolMOS Power MOSFET

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ECO-PACTM 2
CoolMOS Power MOSFET
in ECO-PAC 2
PSHM 40/06
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Package with Electrically Isolated Base
Preliminary Data Sheet
L4
L6
L9 A1
P18 E10
R18 F10
ID25
VDSS
RDSon
K12
NTC
K13
= 38 A
= 600 V
= 70 m
1)
MOSFET
Symbol
VDSS
VGS
ID25
ID90
dv/dt
EAS
EAR
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VDS < VDSS; IF 50A;diF/dt≤ 200A/µs
TVJ = 150°C
ID = 10 A; L = 36 mH; TC = 25°C
ID = 20 A; L = 5 µH; TC = 25°C
Maximum Ratings
600 V
±20 V
38 A
25 A
6 V/ns
1.8 J
1 mJ
Features
ECO-PAC 2 with DCB Base
- Electrical isolation towards the
heatsink
- Low coupling capacitance to the heatsink
for reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- solderable pins for DCB mounting
Symbol
RDSon
VGSth
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = ID90
VDS = 20 V; ID = 3 mA;
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
VGS= 10 V; VDS = 350 V; ID = 50 A
70 m
3.5 5.5 V
25 µA
60 µA
100 nA
220 nC
55 nC
125 nC
VGS= 10 V; VDS = 380 V;
ID = 25 A; RG = 1.8
30 ns
95 ns
100 ns
10 ns
(reverse conduction) IF = 20 A; VGS = 0 V
per MOSFET
0.9 1.1 V
0.45 K/W
Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
fastCoolMOSpowerMOSFET-2ndgeneration
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Enhanced total power density
UL registered, E 148688
Applications
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
1) CoolMOS is a trademark of Infineon Technologies AG.
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20




Powersem GmbH

PSHM06 Datasheet Preview

PSHM06 Datasheet

CoolMOS Power MOSFET

No Preview Available !

Temperature Sensor NTC
Symbol
Conditions
R25
B25/50
T = 25°C
Module
Symbol
TVJ
Tstg
VISOL
Md
a
Conditions
IISOL 1 mA; 50/60 Hz; t = 1 s
Mounting torque (M4)
Max. allowable acceleration
ECO-PACTM 2
Characteristic Values
min. typ. max.
4.75 5.0 5.25 k
3375
K
Dimensions in mm (1 mm = 0.0394")
Maximum Ratings
-40...+150
-40...+125
3600
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s2
Symbol
dS
dA
Weight
Conditions
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Characteristic Values
min. typ. max.
11.2 m m
11.2 m m
24 g
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20


Part Number PSHM06
Description CoolMOS Power MOSFET
Maker Powersem GmbH
Total Page 2 Pages
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