PSHM06 Key Features
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability of chip on DCB
- solderable pins for DCB mounting fast CoolMOS power MOSFET
- 2nd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness Enhanced total power density UL registered, E 148688