RCR1515SI Description
The RCR1515SI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
| Part number | RCR1515SI |
|---|---|
| Download | RCR1515SI Datasheet (PDF) |
| File Size | 337.95 KB |
| Manufacturer | RCR |
| Description | N-Channel Enhancement Mode MOSFET |
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| Part Number | Description |
|---|---|
| RCR1515SG | N-Channel Enhancement Mode MOSFET |
| RCR1515SM | N-Channel Enhancement Mode MOSFET |
| RCR1514ESH | N-Channel Enhancement Mode Field Effect Transistor |
| RCR1525SI | P-Channel Enhancement Mode Field Effect Transistor |
| RCR1526SQ | P-Channel Enhancement Mode Field Effect Transistor |
The RCR1515SI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.