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RCR

RCR1515SI Datasheet Preview

RCR1515SI Datasheet

N-Channel Enhancement Mode MOSFET

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RCR1515SI
N-Channel Enhancement Mode Field Effect Transistor
z Features
20V/5.1A
RDS(ON) = 28mΩ @ VGS = 4.5V
RDS(ON) = 38mΩ @ VGS = 2.5V
RDS(ON) = 60mΩ @ VGS = 1.8V
SOT23 Package
z Pin Configurations
See Diagram below (top view)
z General Description
The RCR1515SI uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
z Package Information
SOT23
Unit:mm
z Absolute Maximum Ratings @TA=25unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current (Continuous)
TA=25°C
TA=70°C
ID
Ratings
20
±12
5.1
4
Unit
V
V
A
1/5




RCR

RCR1515SI Datasheet Preview

RCR1515SI Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

RCR1515SI
Drain Current (Pulse)
Power Dissipation
TA=25°C
Operating Temperature/ Storage Temperature
IDM
PD
TJ//TSTG
20
1
-55~150
A
W
z Electrical Characteristics @TA=25unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
V(BR)DSS
IDSS
VGS(TH)
IGSS
RDS(on)
gFS
VSD
IS
VGS = 0V, ID=250μA
VDS = 20 V, VGS = 0V
VGS =VDS , IDS=250μA
VGS= ± 12V, VDS=0V
VGS = 4.5V, ID = 3A
VGS =2.5V, ID = 2A
VGS =1.8V, ID = 2A
VDS=10V, ID=6A
ISD=1.7A, VGS=0V
20 24
--
V
-- -- 1 μA
0.6 0.84
1
V
-- -- 100 nA
-- 23 28 m
-- 31 38 m
-- 55 60 m
-- 5 -- S
-- 0.9 --
V
-- -- 1.7 A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Qg
Qgs
Qgd
td ( on )
tr
td( off )
tf
VGS=4.5V, VDS=10V, ID=6A
VDS = 10V, ID = 1Α,
VGS = 4.5V, RG = 6
-- 6.3 8.1 nC
-- 1.7 2.2 nC
-- 1.4 1.8 nC
--
10.4
20.8
ns
-- 4.4 8.8 ns
--
27.4
54.8
ns
-- 4.2 8.4 ns
Dynamic
Input Capacitance
Ciss
-- 522.3 --
pF
Output Capacitance
Coss
VDS = 8V, VGS = 0V,f = 1.0MHz
-- 98.5 --
pF
Reverse Transfer Capacitance
Crss
-- 74.7 --
pF
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any
given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t10s junction to ambient thermal resistance rating.
2/5


Part Number RCR1515SI
Description N-Channel Enhancement Mode MOSFET
Maker RCR
Total Page 5 Pages
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