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RCR1515SM - N-Channel Enhancement Mode MOSFET

General Description

The RCR1515SM uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Key Features

  • 20V/5A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) = 38mΩ @ VGS = 2.5V Low VGS(TH) SOT89 Package z Pin Configurations z General.

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Datasheet Details

Part number RCR1515SM
Manufacturer RCR
File Size 325.80 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet RCR1515SM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RCR1515SM N-Channel Enhancement Mode Field Effect Transistor z Features 20V/5A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) = 38mΩ @ VGS = 2.5V Low VGS(TH) SOT89 Package z Pin Configurations z General Description The RCR1515SM uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.RCR1515SM are electrically identical.-RoHS Compliant z Package Information z Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Continuous) TA=25°C TA=70°C ID Drain Current (Pulse) IDM Power Dissipation TA=25°C TA=70°C PD Ratings 20 ±12 5 4 20 1 0.