Datasheet4U Logo Datasheet4U.com

RCR1514ESH - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Low On-Resistance Pin Configurations ①:G.
  • Fast Switching Speed ②:S.
  • Low-voltage drive.
  • Easily designed drive circuits.
  • ESD Protected ③:D Package Information Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS YKKJPD-V3.1 Ratings 60 ±20 Unit V V 1 /4 Drain Current (Continuous) TA=25°C Drain Current (Pulse) Power Dissipation TA=25°C Operating Temperature/ Storage Temperature.
  • 1 P.

📥 Download Datasheet

Datasheet Details

Part number RCR1514ESH
Manufacturer RCR
File Size 603.09 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet RCR1514ESH Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RCR02 Decoder Unisonic Technologies
RCR03 CMOS Unisonic Technologies
RCR2002Wx Resistor Token Passive Components
RCR2562 PFM Step-Up DC/DC Converter Kexin
RCR2C DECODER UTC

Other Datasheets by RCR

Part Number Description
RCR1515SG N-Channel Enhancement Mode MOSFET
RCR1515SI N-Channel Enhancement Mode MOSFET
RCR1515SM N-Channel Enhancement Mode MOSFET
RCR1525SI P-Channel Enhancement Mode Field Effect Transistor
RCR1526SQ P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Field Effect Transistor RCR1514ESH Features ·Low On-Resistance Pin Configurations ①:G ·Fast Switching Speed ②:S ·Low-voltage drive ·Easily designed drive circuits ·ESD Protected ③:D Package Information Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS YKKJPD-V3.1 Ratings 60 ±20 Unit V V 1 /4 Drain Current (Continuous) TA=25°C Drain Current (Pulse) Power Dissipation TA=25°C Operating Temperature/ Storage Temperature *1 Pw ≦10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.