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RCR1515SI Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: RCR

Overview: RCR1515SI N-Channel Enhancement Mode Field Effect Transistor.

Datasheet Details

Part number RCR1515SI
Manufacturer RCR
File Size 337.95 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet RCR1515SI-RCR.pdf

General Description

The RCR1515SI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

z Package Information ③ ①② SOT23 Unit:mm z Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Continuous) TA=25°C TA=70°C ID Ratings 20 ±12 5.1 4 Unit V V A 1/5 RCR1515SI Drain Current (Pulse) Power Dissipation TA=25°C Operating Temperature/ Storage Temperature IDM PD TJ//TSTG 20 1 -55~150 A W ℃ z Electrical Characteristics @TA=25℃ unless otherwise noted Parameter Symbol Test Conditions Min Ty

Key Features

  • 20V/5.1A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) = 38mΩ @ VGS = 2.5V RDS(ON) = 60mΩ @ VGS = 1.8V SOT23 Package z Pin Configurations See Diagram below (top view) z General.

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