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RCR1515SM - N-Channel Enhancement Mode MOSFET

Description

The RCR1515SM uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

  • 20V/5A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) = 38mΩ @ VGS = 2.5V Low VGS(TH) SOT89 Package z Pin Configurations z General.

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Datasheet Details

Part number RCR1515SM
Manufacturer RCR
File Size 325.80 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet RCR1515SM Datasheet
Additional preview pages of the RCR1515SM datasheet.

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Full PDF Text Transcription

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RCR1515SM N-Channel Enhancement Mode Field Effect Transistor z Features 20V/5A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) = 38mΩ @ VGS = 2.5V Low VGS(TH) SOT89 Package z Pin Configurations z General Description The RCR1515SM uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.RCR1515SM are electrically identical.-RoHS Compliant z Package Information z Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Continuous) TA=25°C TA=70°C ID Drain Current (Pulse) IDM Power Dissipation TA=25°C TA=70°C PD Ratings 20 ±12 5 4 20 1 0.
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