SBB5089Z
Key Features
- Wideband Flat Gain to 4GHz: ±1.1 dB
- P1dB=20.4dBm at 1950MHz
- Single Fixed 5V Supply
- Robust 1000V ESD, Class 1C
- Patented Thermal Design and Bias Circuit
Applications
- Cellular, PCS, GSM, UMTS
- Part: SBB5089Z
- Description: CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
- Manufacturer: RF Micro Devices
- Size: 529.65 KB