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RF Micro Devices

RFHA1000 Datasheet Preview

RFHA1000 Datasheet

15W GaN WIDE-BAND POWER AMPLIFIER

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www.DataSheet.co.kr
RFHA1000
50MHz to
1000 MHz,
15 W GaN
Wideband
Power Ampli-
fier
RFHA1000
50MHz TO 1000MHz, 15W GaN WIDEBAND
POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
Advanced GaN HEMT Technology
Output Power of 15W
Advanced Heat-Sink Technology
50MHz to 1000MHz
Instantaneous Bandwidth
Input Internally Matched to 50
28V Operation Typical
Performance
Output Power 41.5dBm
Gain 17dB
Power Added Efficiency 60%
-40°C to 85°C Operating
Temperature
Large Signal Models Available
EAR99 Export Control
Applications
Class AB Operation for Public
Mobile Radio
Power Amplifier Stage for
Commercial Wireless
Infrastructure
General Purpose Tx Amplification
Test Instrumentation
Civilian and Military Radar
VGS
Pin 1
RF IN
Pin 2,3
RF OUT / VDS
Pin 6,7
GND
BASE
Functional Block Diagram
Product Description
The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applica-
tions such as wireless infrastructure, RADAR, two way radios and general purpose
amplification. Using an advanced high power density Gallium Nitride (GaN) semi-
conductor process, these high-performance amplifiers achieve high efficiency, flat
gain, and large instantaneous bandwidth in a single amplifier design. The
RFHA1000 is an input matched GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability through the use of advanced
heat sink and power dissipation technologies. Ease of integration is accomplished
through the incorporation of optimized input matching network within the package
that provides wideband gain and power performance in a single amplifier. An exter-
nal output match offers the flexibility of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
Ordering Information
RFHA1000
RFHA1000PCBA-410
GaN Wideband Power Amplifier
Fully assembled evaluation board 50MHz to 1000MHz;
28V operation
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Prelim DS110922
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
1 of 11
Datasheet pdf - http://www.DataSheet4U.net/




RF Micro Devices

RFHA1000 Datasheet Preview

RFHA1000 Datasheet

15W GaN WIDE-BAND POWER AMPLIFIER

No Preview Available !

www.DataSheet.co.kr
RFHA1000
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Gate Voltage (VG)
Gate Current (IG)
Operational Voltage
RF- Input Power
Ruggedness (VSWR)
Storage Temperature Range
Rating
150
-8 to +2
10
32
31
12:1
-55 to +125
Unit
V
V
mA
V
dBm
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
Operating Temperature Range (TL)
-40 to +85
°C
Operating Junction Temperature (TJ)
200 °C
Human Body Model
Class 1A
MTTF (TJ<200°C, 95% Confidence Limits)*
3E + 06
Hours
Thermal Resistance, RTH (junction to case) 6 °C/W
measured at TC=85 °C, DC bias only
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: PDISS<(TJ-TC)/RTH J-C and TC=TCASE
Parameter
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current
RF Input Power (PIN)
Input Source VSWR
RF Performance
Characteristics
Frequency Range
Linear Gain
Power Gain
Gain Flatness
Gain Variation with Temperature
Input Return Loss (S11)
Output Power (P3dB)
Power Added Efficiency (PAE)
Specification
Min. Typ. Max.
28 32
-5 -3 -2
88
30
10:1
50 1000
17.5
14.5
3
-0.02
-10
41.5
60
Unit Condition
V
V
mA
dBm
MHz
dB
dB
dB
dB/ °C
dB
dBm
%
Small signal 3dB bandwidth
POUT=30dBm, 100MHz
P3DB, 100MHz
POUT=30dBm, 50MHz to 1000MHz
50MHz to 1000MHz
50MHz to 1000MHz
2 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Prelim DS110922
Datasheet pdf - http://www.DataSheet4U.net/


Part Number RFHA1000
Description 15W GaN WIDE-BAND POWER AMPLIFIER
Maker RF Micro Devices
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RFHA1000 Datasheet PDF






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