RFHA1000 Datasheet 15W GaN WIDE-BAND POWER AMPLIFIER

Manufacturer: RF Micro Devices (now Qorvo)

RFHA1000 15w gan wide-band power amplifier by RF Micro Devices (now Qorvo) - Datasheet Preview

Datasheet Details

Part number	RFHA1000
Manufacturer	RF Micro Devices (now Qorvo)
File Size	976.08 KB
Description	15W GaN WIDE-BAND POWER AMPLIFIER
Download	RFHA1000 Download (PDF)

General Description

The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification.

Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.

The RFHA1000 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.

Overview

www.DataSheet.co.kr RFHA1000 50MHz to 1000MHz, 15 W GaN Wideband Power Amplifier RFHA1000 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier /.

Key Features

VGS Pin 1 Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology 50MHz to 1000MHz Instantaneous Bandwidth Input Internally Matched to 50  28V Operation Typical Performance Output Power 41.5dBm Gain 17dB.
Power Added Efficiency 60% -40°C to 85°C Operating Temperature.
RF IN Pin 2,3 RF OUT / VDS Pin 6,7.
GND BASE Functional Block Diagram.
Product.

More Datasheets from RF Micro Devices (now Qorvo)

Part Number	Description
RFHA1003	9W GaN WIDEBAND
RFHA1006	9W GaN WIDEBAND POWER AMPLIFIER
RFHA1020	280W GaN WIDE-BAND PULSED POWER AMPLIFIER
RFHA1023	225W GaN WIDE-BAND PULSED POWER AMPLIFIER