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SGC-6489Z Datasheet Preview

SGC-6489Z Datasheet

high performance SiGe HBT MMIC amplifier

No Preview Available !

SGC-6489Z
50MHz to
3500MHz Sili-
con Germa-
nium Active
Bias Gain
Block
NOT FOR NEW DESIGNS
SGC-6489Z
50MHz to 3500MHz SILICON GERMANIUM
ACTIVE BIAS GAIN BLOCK
Package: SOT-89
Product Description
RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with an active bias network. The active bias
network provides stable current over temperature and process Beta varia-
tions. Designed to run directly from a 5V supply, the SGC-6489Z does not
require a dropping resistor as compared to traditional Darlington amplifi-
ers. The SGC-6489Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and Return Loss
30.0 VD = 5V, ID = 85mA
20.0
S21
10.0
0.0
Bias Tee Data, ZS = ZL = 50 , TL
-10.0
S22
-20.0
-30.0
S11
-40.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
Features
Single Supply Operation: 5V
at ID = 85mA
No Dropping Resistor
Required
Patented Self Bias Circuitry
Gain = 19.5dBm at 1950MHz
P1dB = 19.2dBm at
1950MHz
IP3 = 32.8dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
20.7
22.2
23.7
dB 850MHz
18.0
19.5
21.0 dB 1950MHz
18.3
dB 2400MHz
Output Power at 1dB Compression
20.6
dBm
850MHz
17.7 19.2
dBm
1950MHz
18.4
dBm
2400MHz
Output Third Order Intercept Point
34.1
dBm
850MHz
30.8
32.8
dBm
1950MHz
31.4
dBm
2400MHz
Input Return Loss
14 18
dB 1950MHz
Output Return Loss
8 11
dB 1950MHz
Noise Figure
2.4 3.4 dB 1930MHz
Device Operating Voltage
5V
Device Operating Current
70 82 94 mA
Thermal Resistance
70
°C/W
junction to lead
Test Conditions: VD = 5.0V, ID = 82mA, TL = 25°C, OIP3 Tone Spacing = 1MHz, Bias Tee Data, ZS = ZL = 50, POUT per tone = 0dBm
DS120409
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6




RF Micro Devices

SGC-6489Z Datasheet Preview

SGC-6489Z Datasheet

high performance SiGe HBT MMIC amplifier

No Preview Available !

SGC-6489Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lCE)
Max Device Voltage (VCE)
Max RF Input Power* (See Note)
100 mA
7V
3 dBm
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
+150
-40 to +85
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 2
*Note: Load condition ZL = 50
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL)/RTH, j - l and TL = TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance at Key Operating Frequencies (Bias Tee Data)
Parameter
Unit 100 500 850 1950 2140
MHz MHz MHz MHz MHz
Small Signal Gain (G)
dB
23.1
22.7
22.2
19.5
19.0
Output Third Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
input Return Loss (IRL)
Output Return Loss (ORL)
dBm
dBm
dB
dB
35.1
21.8
37.0
23.0
34.3
20.9
22.0
22.0
34.1
20.6
19.0
19.0
32.8
19.2
18.0
11.0
32.7
19.0
18.0
11.0
Reverse Isolation (S12)
dB
25.0
25.0
26.0
25.0
25.0
Noise Figure (NF)
dB 1.8 2.0 2.1 2.4 2.4
Test Conditions: VD = 5V ID = 85mA OIP3 Tone Spacing = 1MHz, POUT per tone = 0dBm TL = 25°C ZS = ZL = 50
Typical Performance with Bias Tees, VD = 5V, ID = 82mA
2400
MHz
18.3
31.4
18.4
17.0
10.0
24.0
2.5
3500
MHz
15.7
27.4
15.2
16.0
8.0
22.0
2.9
OIP3 versus Frequency
P1dB versus Frequency
(0 dBm/tone, 1 MHz spacing)
36.0
25C
22.0
25C
-40C
-40C
34.0 85C 20.0 85C
32.0
30.0
28.0
18.0
16.0
26.0
14.0
24.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
12.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS120409


Part Number SGC-6489Z
Description high performance SiGe HBT MMIC amplifier
Maker RF Micro Devices
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