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2SB1189 - Medium power transistor

Features

  • High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859.
  • Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO.
  • 80 Collector-emitter voltage VCEO.
  • 80 Emitter-base voltage VEBO.
  • 5 Collector current IC.
  • 0.7 Collector power dissipation 2SB1189 2SB1238 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg.
  • 55 to +150 ∗1 When mounted on a 40×40×0.

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Datasheet Details

Part number 2SB1189
Manufacturer ROHM
File Size 89.37 KB
Description Medium power transistor
Datasheet download datasheet 2SB1189 Datasheet
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Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −80 Collector-emitter voltage VCEO −80 Emitter-base voltage VEBO −5 Collector current IC −0.7 Collector power dissipation 2SB1189 2SB1238 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 When mounted on a 40×40×0.7 mm ceramic board. ∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
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