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Rohm Semiconductor Electronic Components Datasheet

R6009ENJ Datasheet

Power MOSFET

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R6009ENJ
  Nch 600V 9A Power MOSFET
   Datasheet
VDSS
600V
lOutline
TO-263S
 
RDS(on)(Max.)
0.535Ω
SC-83
ID
±9A
LPT(S)
PD
lFeatures
94W
 
      
lInner circuit
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to
  be ±20V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching
Type Tape width (mm)
Quantity (pcs)
24
1000
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6009ENJ
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
TC = 25°C
TC = 100°C
VDSS
ID*1
ID*1
IDP*2
600 V
±9 A
±4.9 A
±18 A
Gate - Source voltage
static
AC(f1Hz)
VGSS
±20 V
±30 V
Avalanche current, repetitive
IAR 1.4 A
Avalanche energy, single pulse
EAS*3
153 mJ
Avalanche energy, repetitive
EAR*3
0.23 mJ
Power dissipation (TC = 25°C)
PD*4 94 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55+150
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/12
20190527 - Rev.003    


Rohm Semiconductor Electronic Components Datasheet

R6009ENJ Datasheet

Power MOSFET

No Preview Available !

R6009ENJ
          
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Reverse diode dv/dt
Drain - Source voltage slope
                Datasheet
Symbol
dv/dt
Conditions
-
Values Unit
15 V/ns
dv/dt VDS = 480V, Tj = 2550 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
RthJC
RthJA*5
Tsold
Values
Min. Typ. Max.
- - 1.3
- - 80
- - 265
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±20V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 2.8A
RDS(on)*6 Tj = 25°C
Tj = 125°C
RG f =1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
    
- 0.1 100 μA
- - 1000
- - ±100 nA
2 - 4V
    
- 0.500 0.535 Ω
- 1.00 -
- 9.6 -
Ω
                                             
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/12
                                          
20190527 - Rev.003


Part Number R6009ENJ
Description Power MOSFET
Maker ROHM
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R6009ENJ Datasheet PDF






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