R6009ENJ
R6009ENJ is Power MOSFET manufactured by ROHM.
Nch 600V 9A Power MOSFET
Datasheet
VDSS
600V l Outline
TO-263S
RDS(on)(Max.)
0.535Ω
SC-83
±9A
LPT(S)
PD l Features
94W
l Inner circuit
1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; Ro HS pliant l Packaging specifications Packing
Embossed Tape
Reel size (mm)
330 l Application Switching
Type Tape width (mm) Quantity (pcs)
24 1000
Taping code
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6009ENJ Unit
Drain
- Source voltage Continuous drain current Pulsed drain current
TC = 25°C TC = 100°C
VDSS ID- 1 ID- 1 IDP- 2
600 V ±9 A ±4.9 A ±18 A
Gate
- Source voltage static AC(f＞1Hz)
VGSS
±20 V ±30 V
Avalanche current, repetitive
IAR 1.4 A
Avalanche energy, single...
