* 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 3.00 2.40 (1) (2) (3) 20.18
* Construction Silicon carbide epitaxial planer type 1.20 2.03 5.45 0.60 ROHM : ＴO-247 (Unit : mm) (1) Anode (2) Cathode (3) Anode
* Absolute maximum ratings (T
SCS110KE2 Datasheet (495.61 KB)
SCS110KE2
495.61 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode SCS110KE2 . Applications General rectification Dimensions (Unit : mm) Case 15.90 1.98 5.03 Structure Cas.
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