SCS110KE2 diode equivalent, sic schottky barrier diode.
1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible
4.32
3.00
2.40
(1) (2) (3)
20.18
*Construction Silicon carbide epitaxia.
General rectification
*Dimensions (Unit : mm)
Case
15.90
1.98 5.03
*Structure
Case
5.62 6.17 3.61
3.81 20.9.
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