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Rohm Semiconductor Electronic Components Datasheet

SCS120KE2 Datasheet

SiC Schottky Barrier Diode

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SiC Schottky Barrier Diode
SCS120KE2
.
Applications
General rectification
Dimensions (Unit : mm)
Case
15.90
1.98
5.03
Structure
Case
Features
1)Shorter recovery time
2)Reduced temperature dependence
3)High-speed switching possible
2.40
3.00
(1) (2) (3)
Construction
Silicon carbide epitaxial planer type
1.20 5.45
2.03
0.60
ROHM : O-247
(Unit : mm)
(1) Anode
(2) Cathode
(3) Anode
Absolute maximum ratings (Tj=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward forward current *6
Surge no repetitive forward current *6
Repetitive peak forward current *6
Total power disspation *6
Junction temperature
VRM
VR
IF
IFSM
IFRM
PD
Tj
1200
1200
10/ 20 *1
45 / 90 *2
190 / 380*3
30 / 58*4
115 / 210*5
175
V
V
A
A
A
A
W
°C
Range of storage temperature
Tstg 55 to 175
°C
Junction to case *6
Rth(j-c)
1.3 / 0.70
°C / W
(*1)Tc=135°C / 132°C (*2)PW=8.3ms sinusoidal,Tj=25°C
(*3)PW=10s square,Tj=25°C (*4)Tc=120°C,Tj=150°C,Duty cycle=10% (*5)Tc=25°C (*6)Per Leg / Per Device
Electrical characteristics (Tj=25°C) [Per Leg]
Parameter
Symbol
DC blocking voltage
VDC
Forward voltage
VF
Reverse current
IR
Total capacitance
Total capacitive charge
Switching time
C
Qc
tc
Min.
1200
-
-
-
-
-
-
-
-
Typ.
-
1.50
2.00
10
120
650
50
34
16
Max.
-
1.70
-
200
-
-
-
-
-
Unit Conditions
V IR=0.2mA
V IF=10A,Tj=25°C
V IF=10A,Tj=175°C
μA VR=1200V,Tj=25°C
μA VR=1200V,Tj=175°C
pF VR=1V,f=1MHz
pF VR=800V,f=1MHz
nC VR=800V,di/dt=500A/μs
ns VR=800V,di/dt=500A/μs
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
1/3
2012.04 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

SCS120KE2 Datasheet

SiC Schottky Barrier Diode

No Preview Available !

SCS120KE2
Electrical characteristic curves (Ta=25C)
 
DataSheet
Fig.1 VF-IF Characteristics [Per Leg]
100
pulsed
10
Ta= 175
1
Ta= 125
0.1
0.01
Ta= 75
Ta= 25
Ta=-25
0.001
0.0
0.5 1.0 1.5 2.0
FORWARD VOLTAGE : VF (V)
2.5
Fig.3 VR-IR Characteristics [Per Leg]
100
Ta= 175
10 Ta= 125
Ta= 75
1
0.1
0.01
0.001
0.0001
0
Ta= 25
Ta=-25
200 400 600 800 1,000
REVERSE VOLTAGE: VR (V)
1,200
Fig.5 Thermal Resistance vs Pulse Width
10
Ta=25
Single Pulse
1
0.1
0.01
0.0001 0.001 0.01 0.1 1 10
Pulse width Pw s
100 1000
Fig.2 VF-IF Characteristics [Per Leg]
15
pulsed
Ta=-25
10 Ta= 25
Ta= 175
5 Ta= 125
Ta= 75
0
0.0
0.5 1.0 1.5 2.0
FORWARD VOLTAGE : VF (V)
10,000
Fig.4 VR-Ct Characteristics [Per Leg]
Ta=25
f=1MHz
2.5
1,000
100
10
0.01
0.1 1 10 100
REVERSE VOLTAGE : VR [V]
1000
Fig.6 Power Dissipation
250
200
150
100
50
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE Tc ()
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/3
2012.04 - Rev.A


Part Number SCS120KE2
Description SiC Schottky Barrier Diode
Maker ROHM
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SCS120KE2 Datasheet PDF






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