SiC Schottky Barrier Diode
SCS140AE2
lApplications
Switching power supply
lDimensions (Unit : mm)
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer type
Data Sheet
lStructure
ROHM : TO-247
lAbsolute maximum ratings (Tj=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current*6
Surge no repetitive forward
current*6
Repetitive peak forward current*6
Total power disspation*6
Junction temperature
VRM
VR
IF
IFSM
IFRM
PD
Tj
600
600
20 / 40*1
76 / 152*2
300 / 600*3
72 / 121*4
120 / 210*5
175
V
V
A
A
A
A
W
°C
Range of storage temperature
Tstg
-55 to +175
°C
Junction to case *6
Rth(j-c)
1.2 / 0.70
°C / W
(*1)Tc=121°C / Tc=112°C (*2)PW=8.3ms sinusoidal,Tj=25°C
(*3)PW=10ms square,Tj=25°C (*4)Tc=95°C,Tj=125°C,Duty cycle=10% (*5)Tc=25°C (*6)Per Leg / Per Device
lElectrical characteristics (Tj=25°C) [Per Leg]
Parameter
Symbol Min.
DC blocking voltage
VDC 600
Forward voltage
VF
-
-
Reverse current
IR -
Total capacitance
Total capacitive charge
Switching time
C-
-
Qc -
tc -
Typ.
-
1.5
1.82
4
80
860
93
35
19
Max.
-
1.7
-
400
-
-
-
-
-
Unit Conditions
V IR=0.4mA
V IF=20A,Tj=25°C
V IF=20A,Tj=175°C
μA VR=600V,Tj=25°C
μA VR=600V,Tj=175°C
pF VR=1V,f=1MHz
pF VR=600V,f=1MHz
nC VR=400V,di/dt=350A/μs
ns VR=400V,di/dt=350A/μs
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2012.04 - Rev.A
