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SCS140AE2 - SiC Schottky Barrier Diode

Key Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type Data Sheet lStructure ROHM : TO-247 lAbsolute maximum ratings (Tj=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current.
  • 6 Surge no repetitive forward current.
  • 6 Repetitive peak forward current.
  • 6 Total power disspation.
  • 6 Junction temperature VRM VR IF IFSM IFRM PD Tj 6.

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Datasheet Details

Part number SCS140AE2
Manufacturer ROHM
File Size 413.62 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS140AE2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Schottky Barrier Diode SCS140AE2 lApplications Switching power supply lDimensions (Unit : mm) lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type Data Sheet lStructure ROHM : TO-247 lAbsolute maximum ratings (Tj=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current*6 Surge no repetitive forward current*6 Repetitive peak forward current*6 Total power disspation*6 Junction temperature VRM VR IF IFSM IFRM PD Tj 600 600 20 / 40*1 76 / 152*2 300 / 600*3 72 / 121*4 120 / 210*5 175 V V A A A A W °C Range of storage temperature Tstg -55 to +175 °C Junction to case *6 Rth(j-c) 1.2 / 0.