F25N10 mosfet equivalent, 25a 100v n-channel enhancement mode power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤36mΩ)
* Low Gate Charge(Typical:61nC)
* Low Reverse Transfer Capacitances(Typical:84pF)
* 100% Single Pulse.
* Power switching applications
* LED Boost
* UPS power supply
* Load switch
VDSS = 100V RDS(on) （TYP)= .
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
* Fast Switching
* Low ON Resistance(Rdson≤36mΩ)
* Low Gate Charge(T.
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