F2N60 - 2A 600V N-channel Enhancement Mode Power MOSFET

Product Overview

Datasheet Details

Part number	F2N60
Manufacturer	ROUM
File Size	1.42 MB
Description	2A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	F2N60 Datasheet
Additional preview pages of the F2N60 datasheet.

Product details

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

Fast Switching.
Low ON Resistance(Rdson≤4.5Ω).
Low Gate Charge(Typ:8nC).
Low Reverse Transfer Capacitances(Typ:3.8pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test TO-220C TO-220F TO-262 3.

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Published: Jan 16, 2019 |