F2N60 Datasheet | Specifications & PDF Download

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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MDF2N60B N-channel MOSFET 600V MDF2N60B N-Channel MOSFET 600V, 2.0A, 4.5Ω General Description These N-channel MOSFET are produced using advanced Mag

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP2N60Z

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP2N60Z

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Silan Microelectronics SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhanc

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UNISONIC TECHNOLOGIES CO., LTD F2N60 2.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC F2N60 is a N-Channel enhancement mode silicon gate power

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F2N60 N- MOS /N-CHANNEL POWER MOSFET ◆: ◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power Supply ◆: RoHS ◇Features:

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Main Product Characteristics VDSS RDS(on) ID 600V 3.7Ω (typ.) 2A TO-252 Features and Benefits  Advanced MOSFET process technology  Special desig

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SEMICONDUCTOR TECHNICAL DATA KF2N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF2N60P This planar stripe MOSFET has better char

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WFF2N60 Silicon N-Channel MOSFET Features ■2A,600V, RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%

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FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET FQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω December 2013 Description This N-Channe

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Silan Microelectronics SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhanc

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Main Product Characteristics VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Features and Benefits TO-220  Advanced Process Technology  Special designed

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Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Features and Benefits: TO220F  Advanced MOSFET process technology  Special

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Main Product Characteristics VDSS RDS(on) 600V 3.8Ω (typ.) ID 2A Features and Benefits TO-252  Advanced MOSFET process technology  Special des

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Main Product Characteristics: VDSS RDS(on) 600V 3.5Ω (typ.) ID 2A Features and Benefits: TO-251  Advanced MOSFET process technology  Special d

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Silan Microelectronics SVF2N60RD/M/MJ_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60RD/M/MJ is an N-channel enhancement mode power

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Aug 2006 PFP2N60 / PFF2N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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Shenzhen SI Semiconductors Co., LTD. N- MOS / N-CHANNEL POWER MOSFET Product Specification SIF2N60 FEATURES LOW ON-RESISTANCE ■RoHS COMPLIANT FAS

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