RM20N150LD mosfet equivalent, n-channel super trench power mosfet.
* VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating te.
The RM20N150LD uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and.
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