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RM20N150LD - N-Channel Super Trench Power MOSFET

General Description

frequency switching performance.

low combination of RDS(ON) and Qg.

Key Features

  • VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Schematic diagram D S G TO-252 -2Ltop view.

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Datasheet Details

Part number RM20N150LD
Manufacturer Rectron
File Size 264.58 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet RM20N150LD Datasheet

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Full PDF Text Transcription (Reference)

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RM20N150LD N-Channel Super Trench Power MOSFET Description The RM20N150LD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.