Datasheet4U.com

RM20N150LD Datasheet - Rectron

RM20N150LD, N-Channel Super Trench Power MOSFET

The RM20N150LD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switc.

datasheet Preview Page 1 from Datasheet4u.com

RM20N150LD-Rectron.pdf

RM20N150LD Datasheet Preview — Preview of RM20N150LD PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number:

RM20N150LD

Manufacturer:

Rectron

File Size:

264.58 KB

Description:

N-Channel Super Trench Power MOSFET

RM20N150LD Features

* VDS =150V,ID =20A RDS(ON)=59mΩ (typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Schematic diagram D S G TO-252 -2Ltop view Application

* LED back

RM20N150LD Distributors

📁 Related Datasheet

RM2000E RM200DA-20F RM200DA-24F RM200DY1-24S RM200HA-20F RM200HA-24F

📌 All Tags

RM20N150LD N-Channel Super Trench Power MOSFET Rectron

Rectron RM20N150LD-like datasheet