RM3075S8 mosfet equivalent, n and p-channel enhancement mode power mosfet.
N-Channel VDS = 30V,ID =6.8A RDS(ON) < 40m @ VGS=4.5V RDS(ON) < 27m @ VGS=10V P-Channel VDS = -30V,ID = -4.6A RDS(ON) < 103m @ VGS=-4.5V RDS(ON) < 64m @ VGS=-10V
N-chann.
and suited for high and low side switches for inverter ; high and low side switches for generic Half-Bridge, low voltage.
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