RM30P30D3 mosfet equivalent, p-channel enhancement mode power mosfet.
ƽ VDS = -30V,ID = -30A RDS(ON) < 13mΩ @ VGS=-4.5V RDS(ON) < 10mΩ @ VGS=-10V
ƽ High Power and current handing capability ƽ Lead free product is acquired ƽ Surface mount pa.
General Features
ƽ VDS = -30V,ID = -30A RDS(ON) < 13mΩ @ VGS=-4.5V RDS(ON) < 10mΩ @ VGS=-10V
ƽ High Power and current .
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