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RM3415 Datasheet, Rectron

RM3415 mosfet equivalent, p-channel enhancement mode power mosfet.

RM3415 Avg. rating / M : 1.0 rating-121

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RM3415 Datasheet

Features and benefits

ƽ VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ƽ High Power and current handing capability ƽ Lead free product is acquir.

Application

.It is ESD protested. General Features ƽ VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD R.

Description

The RM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ƽ.

Image gallery

RM3415 Page 1 RM3415 Page 2 RM3415 Page 3

TAGS

RM3415
P-Channel
Enhancement
Mode
Power
MOSFET
Rectron

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