RM4P20ES6 datasheet, mosfet equivalent, Rectron

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Features and benefits

VDS = -20V,ID = -4.1A RDS(ON) <80m Ω @ VGS=-2.5V RDS(ON) GS=-4.5V ESD: HBM >2000V High power and current handing capability Lead free product is acquired Surface .

Application

D G General Features VDS = -20V,ID = -4.1A RDS(ON) <80m Ω @ VGS=-2.5V RDS(ON) GS=-4.5V ESD: HBM >2000V High pow.

Description

The RM4P20ES6 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G General Features VDS = -20V,I.

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