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DATA SHEET
SILICON TRANSISTOR
2SC1623
NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)
• High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range Tstg −55 to +150 °C
PACKAGE DRAWING (Unit: mm)
+0.1 –0.05
2.8 ± 0.2 1.5 TYP.
0.65
+0.1 –0.15
0.4
2.9 ± 0.2 0.95 0.95 TYP. TYP.
+0.1 –0.05
2 3
1 Marking
0.4
+0.1 –0.06
1.1 to 1.4 0.3 TYP.
0.16
0 to 0.
2SC1623 Datasheet
