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2SK2734
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A)
• 4V gate drive devices. • Large current capacitance
ID = 5 A
Outline
TO-92MOD.
ADE-208-520 (Z) 1st. Edition Jun 1997
D G
S
32 1
1. Source 2. Drain 3. Gate
2SK2734
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation
VDSS VGSS ID I *1
D(pulse)
I DR Pch
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
Ratings
Unit
30
V
±20
V
5
A
20
A
5
A
0.