HAF1008S Datasheet | Renesas

Description This FET has the over temperature shut- down capability sensing to the junction temperature. This FET has the built- in over temperature shut- down circuit in the gate area. And this circuit operation to shut- down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features - Logic level operation (-4 to -6 V Gate drive) - High endurance capability against to the short circuit - Built- in the over temperature shut- down circuit - Latch type shut- down operation (Need 0 voltage recovery) Outline LDPAK G Gate resistor Temperature Sencing Circuit Latch Circuit Gate Shutdown Circuit 1 2 3 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, May.13.2003, page 1 of 11 HAF1008(L), HAF1008(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage Gate to source voltage VGSS VGSS Drain current Drain peak current ID (pulse) Note1 Body-drain diode reverse drain IDR current Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg...