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M6MGT331S8BKT Datasheet CMOS Sram

Manufacturer: Renesas

Overview: www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change.

General Description

The M6MGB/T331S8BKT is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 8M-bit Static RAM in a 52-pin TSOP for lead free use.

32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, , single power supply and high performance nonvolatile memory fabricated by CMOS technology for the peripheral circuit and DINOR (Divided bit-line NOR IV) architecture for the memory cell.

All memory blocks are locked and can not be programmed or erased, when F-WP# is low.

Key Features

  • Access Time Flash SRAM Supply Voltage Ambient Temperature Package 70ns (Max. ) 85ns (Max. ) VCC=2.7 ~ 3.0V Ta=-40 ~ 85 °C 52pin TSOP(Type-II), Lead pitch 0.4mm Outer-lead finishing:Sn-Cu.

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