Part number:
N0600N
Manufacturer:
File Size:
252.64 KB
Description:
Mos field effect transistor.
* Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
* Low input capacitance ⎯ Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V) Ordering Information Part No. N0600N-S17-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50p/
N0600N
252.64 KB
Mos field effect transistor.
📁 Related Datasheet
N0601N N-CHANNEL MOSFET (Renesas)
N0602N N-Channel MOSFET (Renesas)
N0603N N-CHANNEL MOSFET (Renesas)
N0604N N-CHANNEL MOSFET (Renesas)
N0616LC400 Phase Control Thyristor (IXYS)
N0616LC420 Phase Control Thyristor (IXYS)
N0616LC440 Phase Control Thyristor (IXYS)
N0616LC450 Phase Control Thyristor (IXYS)
N0634LC380 Phase Control Thyristor (WESTCODE)
N0634LC400 Phase Control Thyristor (WESTCODE)