N0600N - MOS FIELD EFFECT TRANSISTOR

Renesas

Datasheet Details

R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications..

Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A).
Low input capacitance ⎯ Ciss = 1380 pF TYP. (VDS = 10 V, VGS = 0 V) Ordering Information Part No. N0600N-S17-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50p/tube Package Isolated TO-220 typ. 2.2 g Note: ∗1. Pb-free (This product does not contain Pb in the external electrode and other parts. ) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Volt.

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