Datasheet4U Logo Datasheet4U.com

NE3516S02 - N-Channel GaAs HJ-FET

Datasheet Summary

Description

Rev.

All trademarks and registered trademarks are the property of their respective owners.

1.

Features

  • R09DS0038EJ0100 Rev.1.00 Apr 18, 2012.
  • Low noise figure and high associated gain NF = 0.35 dB TYP. , Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP. , Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value).
  • 4-pin Micro-X plastic (S02) package.

📥 Download Datasheet

Datasheet preview – NE3516S02

Datasheet Details

Part number NE3516S02
Manufacturer Renesas
File Size 143.00 KB
Description N-Channel GaAs HJ-FET
Datasheet download datasheet NE3516S02 Datasheet
Additional preview pages of the NE3516S02 datasheet.

📁 Similar Datasheet

  • NE3510M04 - HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
  • NE3511S02 - X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
  • NE3512S02 - HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
  • NE3514S02 - K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
  • NE350184C - HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
  • NE3503M04 - C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER (California Eastern Labs)
  • NE3505M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
  • NE3508M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
  • NE3509M04 - L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
  • NE3002-VA10A - Near edge thermal printhead (300 dots / inch) (Rohm)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
Data Sheet NE3516S02 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain FEATURES R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 • Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP., Ga = 13.5 dB TYP.
Published: |