Datasheet4U Logo Datasheet4U.com

NE3516S02 - N-Channel GaAs HJ-FET

NE3516S02 Description

Data Sheet NE3516S02 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain .
Summary First edition issued Rev. All trademarks and registered trademarks are the property of their respect.

NE3516S02 Features

* R09DS0038EJ0100 Rev.1.00 Apr 18, 2012
* Low noise figure and high associated gain NF = 0.35 dB TYP. , Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP. , Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value)
* 4-pin Micro-X plastic (S02) package

NE3516S02 Applications

* X to Ku band DBS LNB
* Other Ku band communication system ORDERING INFORMATION Part Number Order Number Package S02 package (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking P Supplying Form
* 8 mm wide embossed taping
* Pin 4 (Gate) faces the perforation side of

📥 Download Datasheet

Preview of NE3516S02 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • NE3510M04 - HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
  • NE3511S02 - X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
  • NE3512S02 - HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
  • NE3514S02 - K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
  • NE350184C - HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
  • NE3503M04 - C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER (California Eastern Labs)
  • NE3505M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
  • NE3508M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)

📌 All Tags

N-Channel GaAs HJ-FET Renesas
Renesas NE3516S02-like datasheet