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NP16N04YUG Key Features

  • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
  • Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

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NP16N04YUG Description

The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.