NP36N055IHE
DESCRIPTION
These products are N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
- Channel temperature 175 degree rated
- Super low on-state resistance
RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 18 A)
- Low Ciss : Ciss = 2300 p F TYP.
- Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP36N055HHE NP36N055IHE Note
TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z
NP36N055SHE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
±20
Drain Current (DC) Drain Current (Pulse) Note1
ID(DC) ID(pulse)
±36 ±144
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
IAS 36 / 33
Single Avalanche Energy Note2
EAS 12 / 108
Channel Temperature
Tch 175
Storage Temperature
Tstg
- 55 to + 175
V V A A W W A m J °C...
