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NP36N055HHE - N-CHANNEL POWER MOSFET

General Description

These products are N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 18 A).
  • Low Ciss : Ciss = 2300 pF TYP.
  • Built-in gate protection diode.

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Other Datasheets by Renesas

Part Number Description
NP36N055HLE N-Channel Power MOSFET
NP36N055IHE N-CHANNEL POWER MOSFET
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NP36N055SLE N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE, NP36N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 18 A) • Low Ciss : Ciss = 2300 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP36N055HHE NP36N055IHE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP36N055SHE Note Not for new design.