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NP36N055SHE - N-CHANNEL POWER MOSFET

Download the NP36N055SHE datasheet PDF. This datasheet also covers the NP36N055HHE variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These products are N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 18 A).
  • Low Ciss : Ciss = 2300 pF TYP.
  • Built-in gate protection diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP36N055HHE-Renesas.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Renesas

Part Number Description
NP36N055SLE N-Channel Power MOSFET
NP36N055HHE N-CHANNEL POWER MOSFET
NP36N055HLE N-Channel Power MOSFET
NP36N055IHE N-CHANNEL POWER MOSFET
NP36N055ILE N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HHE, NP36N055IHE, NP36N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 18 A) • Low Ciss : Ciss = 2300 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP36N055HHE NP36N055IHE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP36N055SHE Note Not for new design.