NP36N055IHE
Overview
These products are N-Channel MOS Field Effect Transistor designed for high current switching applications.
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 18 A)
- Low Ciss : Ciss = 2300 pF TYP.
- Built-in gate protection diode
