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NP36N055HLE - N-Channel Power MOSFET

General Description

These products are N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 16 mΩ MAX. (VGS = 5 V, ID = 18 A).
  • Low Ciss : Ciss = 2900 pF TYP.
  • Built-in gate protection diode NP36N055ILE Note NP36N055SLE Note Not for new design. TO-252 (JEITA) / MP-3Z TO-252 (JEDEC) / MP-3ZK (TO-251).

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Other Datasheets by Renesas

Part Number Description
NP36N055HHE N-CHANNEL POWER MOSFET
NP36N055IHE N-CHANNEL POWER MOSFET
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NP36N055SHE N-CHANNEL POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE, NP36N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER NP36N055HLE PACKAGE TO-251 (JEITA) / MP-3 FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 16 mΩ MAX. (VGS = 5 V, ID = 18 A) • Low Ciss : Ciss = 2900 pF TYP. • Built-in gate protection diode NP36N055ILE Note NP36N055SLE Note Not for new design.