MOS FIELD EFFECT TRANSISTOR
NP36N055HHE, NP36N055IHE, NP36N055SHE
N-CHANNEL POWER MOSFET
These products are N-Channel MOS Field Effect Transistor
designed for high current switching applications.
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 18 A)
• Low Ciss : Ciss = 2300 pF TYP.
• Built-in gate protection diode
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
IAS 36 / 33
Single Avalanche Energy Note2
EAS 12 / 108
Tstg –55 to + 175
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14152EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.