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NP40N055MLE - MOS FIELD EFFECT TRANSISTOR

Download the NP40N055MLE datasheet PDF (NP40N055ELE included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for mos field effect transistor.

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID = 20 A) RDS(on)3 = 32 mΩ MAX. (VGS = 4.5 V, ID = 20 A).
  • Low input capacitance Ciss = 1300 pF TYP.
  • Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all produ.

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Note: The manufacturer provides a single datasheet file (NP40N055ELE-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NP40N055MLE
Manufacturer Renesas
File Size 326.19 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP40N055MLE Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055ELE, NP40N055KLE NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP40N055ELE-E1-AY Note1, 2 NP40N055ELE-E2-AY Note1, 2 NP40N055KLE-E1-AY Note1 NP40N055KLE-E2-AY Note1 NP40N055CLE-S12-AZ Note1, 2 NP40N055DLE-S12-AY Note1, 2 NP40N055MLE-S18-AY Note1 NP40N055NLE-S18-AY Note1 LEAD PLATING Pure Sn (Tin) Sn-Ag-Cu Pure Sn (Tin) PACKING Tape 800 p/reel Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g TO-263 (MP-25ZK) typ. 1.5 g TO-220 (MP-25) typ. 1.
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