* Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
* Low Ciss Ciss = 5700 pF TYP. ABSOL.

ORDERING INFORMATION PART NUMBER NP82N06PDG-E1-AY Note NP82N06PDG-E2-AY Note LEAD PLATING Pure Sn (Tin) Note See “T.

The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N06PDG-E1-AY Note NP82N06PDG-E2-AY Note LEAD PLATING Pure Sn (Tin) Note See “TAPE INFORMATION” PACKING.

NP82N06PLG

NP82N03PUG

NP82N04MDG

NP82N04MLG

NP82N04NDG

NP82N04NLG

NP82N04PDG

NP82N04PUG

NP82N055CHE

NP82N055DHE

NP82N055EHE

NP82N055KHE

NP82N055MUG