MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Pure Sn (Tin)
Note See “TAPE INFORMATION”
typ. 1.5 g
• Super low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
• Low Ciss
Ciss = 5700 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Tstg −55 to +175
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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Document No. D18227EJ1V0DS00 (1st edition)
Date Published June 2006 NS CP(K)
Printed in Japan