R1RW0408DI Datasheet - Renesas

4M High Speed SRAM

R1RW0408DI Features

* Single 3.3V supply: 3.3V ± 0.3V

* Access time: 12ns (max)

* Completely static memory ⎯ No clock or timing strobe required

* Equal access and cycle times

* Directly TTL compatible ⎯ All inputs and outputs

* Operating current: 100mA (max)

* TTL

R1RW0408DI General Description

The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density me.

R1RW0408DI Datasheet (360.55 KB)