R1RW0408DI
Overview
The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.
- Single 3.3V supply: 3.3V ± 0.3V
- Access time: 12ns (max)
- Completely static memory ⎯ No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible ⎯ All inputs and outputs
- Operating current: 100mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current : 5mA (max)
- Temperature range: -40 to +85°C
