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R1RW0408DI - 4M High Speed SRAM

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Renesas

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R1RW0408DI 4M High Speed SRAM by Renesas - Datasheet Preview — Datasheet preview – R1RW0408DI

Datasheet Details

Part number	R1RW0408DI
Manufacturer	Renesas
File Size	360.55 KB
Description	4M High Speed SRAM
Datasheet	R1RW0408DI Datasheet
Additional preview pages of the R1RW0408DI datasheet.

Product details

Description

The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

Features

Single 3.3V supply: 3.3V ± 0.3V.
Access time: 12ns (max).
Completely static memory ⎯ No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible ⎯ All inputs and outputs.
Operating current: 100mA (max).
TTL standby current: 40mA (max).
CMOS standby current : 5mA (max).
Temperature range:.
40 to +85°C Ordering Information Type No. R1RW0408DGE-2PI Access time 12ns Package 400-m.

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Published: Aug 5, 2020 |