* Built-in power MOS FET suitable for applications with 12 V input and low output voltage
* Built-in driver circuit which matches the power MOS FET
* Built-in.

with 12 V input and low output voltage
* Built-in driver circuit which matches the power MOS FET
* Built-in tri-.

The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-cur.

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