R2J20601NP
Description
The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier diode (SBD), eliminating the need for an external SBD for this purpose.
Integrating a driver and both high-side and low-side power MOS FETs, the new device is also pliant with the package standard “Driver
- MOS FET integrated Si P (Dr MOS)” proposed by Intel Corporation.
Features
- Built-in power MOS FET suitable for applications with 12 V input and low output voltage
- Built-in driver circuit which matches the power MOS FET
- Built-in tri-state input function which can support a number of PWM controllers
- VIN operating-voltage range: 16 V max
- High-frequency operation (above 1 MHz) possible
- Large average output current (35 A)
- Achieve...
