Datasheet4U Logo Datasheet4U.com

RBN75N65T1UFWA

IGBT

RBN75N65T1UFWA Features

* Renesas generation 8th Trench IGBT

* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C)

* High speed switching

* Applications: UPS, Welding, photovoltaic inverters, Power converter system

* Unsawn wafer Wafer size = 200 mm

RBN75N65T1UFWA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully resp.

RBN75N65T1UFWA Datasheet (138.71 KB)

Preview of RBN75N65T1UFWA PDF

Datasheet Details

Part number:

RBN75N65T1UFWA

Manufacturer:

Renesas ↗

File Size:

138.71 KB

Description:

Igbt.

📁 Related Datasheet

RBN75N125S1UFWA - IGBT (Renesas)
RBN75N125S1UFWA 1250V - 75A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (.

RBN75H125S1FP4-A0 - IGBT (Renesas)
Datasheet RBN75H125S1FP4-A0 1250V - 75A - IGBT Power Switching R07DS1382EJ0141 Rev.1.41 Oct.14.2021 Features • Trench gate and thin wafer technolo.

RBN75H65T1FPQ-A0 - IGBT (Renesas)
Datasheet RBN75H65T1FPQ-A0 650V - 75A - IGBT Power Switching R07DS1383EJ0120 Rev.1.20 Aug.03.2020 Features  Trench gate and thin wafer technology .

RBN100N180S2HFWA - IGBT (Renesas)
RBN100N180S2HFWA 1800V - 200A/100A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for h.

RBN150N180S2HFWA - IGBT (Renesas)
RBN150N180S2HFWA 1800V - 300A/150A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for h.

RBN200N180S2HFWA - IGBT (Renesas)
RBN200N180S2HFWA 1800V - 400A/200A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for h.

RBN25H125S1FPQ-A0 - IGBT (Renesas)
RBN25H125S1FPQ-A0 1250V - 25A - IGBT Power Switching Datasheet R07DS1378EJ0141 Rev.1.41 Oct.14.2021 Features • Trench gate and thin wafer technolog.

RBN25N125S1UFWA - IGBT (Renesas)
RBN25N125S1UFWA 1250V - 25A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (.

TAGS

RBN75N65T1UFWA IGBT Renesas

Image Gallery

RBN75N65T1UFWA Datasheet Preview Page 2 RBN75N65T1UFWA Datasheet Preview Page 3

RBN75N65T1UFWA Distributor