* Renesas generation 8th Trench IGBT
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C)
* High speed s.

UPS, Welding, photovoltaic inverters, Power converter system
* Unsawn wafer Wafer size = 200 mm
* Quality grade.

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully resp.

RBN75N125S1UFWA

RBN75H125S1FP4-A0

RBN75H65T1FPQ-A0

RBN150N180S2HFWA

RBN200N180S2HFWA

RBN25H125S1FPQ-A0

RBN25N125S1UFWA

RBN40H125S1FPQ-A0

RBN40H65T1FPQ-A0

RBN40N125S1UFWA

RBN40N65T1UFWA

RBN50H65T1FPQ-A0

RB-150