Click to expand full text
RBN75N65T1UFWA
650V - 75A - IGBT
Features
Renesas generation 8th Trench IGBT Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C) High speed switching Applications: UPS, Welding, photovoltaic inverters, Power converter system Unsawn wafer Wafer size = 200 mm Quality grade: Standard
Datasheet
R07DS1498EJ0120 Rev.1.20
Oct.18th.2024
Key performance
Product name RBN75N65T1UFWA
VCES 650 V
IC 75 A
Die size 23.04 mm2 (4.80 mm x 4.80 mm)
Package Unsawn wafer
Outline
2 C
G 1
E 3 1. Gate 2. Collector (The back) 3. Emitter
Die
2 3 1 3
Wafer
Mechanical parameter
Chip size Area total Thickness Wafer size Passivation frontside Pad metal Backside metal
R07DS1498EJ0120 Rev.1.20 Oct.18th.2024
4.80 x 4.80 23.04
0.075 typ. 193.
RBN75N65T1UFWA Datasheet
