RBN75N65T1UFWA Datasheet, Igbt, Renesas

RBN75N65T1UFWA Features

  • Igbt
  • Renesas generation 8th Trench IGBT
  • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C)
  • High speed swit

PDF File Details

Part number:

RBN75N65T1UFWA

Manufacturer:

Renesas ↗

File Size:

138.71kb

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📄 Datasheet

Description:

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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RBN75N65T1UFWA Application

  • Applications UPS, Welding, photovoltaic inverters, Power converter system
  • Unsawn wafer Wafer size = 200 mm
  • Quality grade: Stand

TAGS

RBN75N65T1UFWA
IGBT
Renesas

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Stock and price

Renesas Electronics Corporation
RENRBN75N65T1UFWA-8F0#FF0 P-TRS1 HV-IGBT (Alt: RBN75N65T1UFWA-8F0#FF0)
Avnet Asia
RBN75N65T1UFWA-8F0#FF0
0 In Stock
0
Unit Price : $0
No Longer Stocked
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