RJH1CD5DPQ-A0
Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode (trr = 100 ns typ.) in one package
- Trench gate and thin wafer technology
- High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 15 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0451EJ0100 Rev.1.00 Jul 22, 2011
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
4 G
1. Gate 2. Collector 3. Emitter 4. Collector
1 2
.Data Sheet.net/
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc...
