RJH1CD6DPQ-A0 Description
Preliminary Datasheet RJH1CD6DPQ-A0 1200 V - 20 A - IGBT Application:.
RJH1CD6DPQ-A0 Key Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode (trr = 100 ns typ.) in one package
- Trench gate and thin wafer technology