RJH1CV6DPQ-E0 Description
Preliminary Datasheet RJH1CV6DPQ-E0 1200V - 30A - IGBT Application:.
RJH1CV6DPQ-E0 Key Features
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
- Built-in fast recovery diode (trr = 180 ns typ.) in one package
- Trench gate and thin wafer technology