RJH1DF7RDPQ-80 Description
Preliminary Datasheet RJH1DF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching.
RJH1DF7RDPQ-80 Key Features
- Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction he
- Gate to emitter voltage rating ±30 V
- Pb-free lead plating R07DS0413EJ0100 Rev.1.00 May 18, 2011