RJH6086BDPK igbt equivalent, igbt.
* Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load)
* Low on-state voltage
* Fast recovery diode R0.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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