Datasheet4U Logo Datasheet4U.com

RJH6088BDPK - High Speed Power Switching

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load).
  • Low on-state voltage.
  • Fast recovery diode R07DS0390EJ0100 Rev.1.00 May 11, 2011 Outline.

📥 Download Datasheet

Datasheet Details

Part number RJH6088BDPK
Manufacturer Renesas
File Size 169.31 KB
Description High Speed Power Switching
Datasheet download datasheet RJH6088BDPK Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJH60C9DPD Silicon N Channel IGBT Renesas Technology
RJH60D0DPK Silicon N Channel IGBT Renesas Technology
RJH60D1DPE Silicon N Channel IGBT Renesas Technology
RJH60D1DPP-M0 Silicon N-Channel IGBT Renesas Technology
RJH60D2DPE Silicon N Channel IGBT Renesas Technology

Other Datasheets by Renesas

Part Number Description
RJH6086BDPK IGBT
RJH6087BDPK High Speed Power Switching
RJH60D0DPM IGBT
RJH60D0DPQ-A0 IGBT
RJH60D1DPP-A0 IGBT

Full PDF Text Transcription

Click to expand full text
Preliminary Datasheet RJH6088BDPK Silicon N Channel IGBT High Speed Power Switching Features • Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode R07DS0390EJ0100 Rev.1.00 May 11, 2011 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 www.DataSheet.
Published: |