RJH60F4DPQ-A0 Description
Preliminary Datasheet RJH60F4DPQ-A0 600 V - 30 A - IGBT High Speed Power Switching.
RJH60F4DPQ-A0 Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology